CyberCoders Device Engineer - GaN HEMT for RF & Power in Los Angeles, California
Device Engineer - GaN HEMT for RF & Power Device Engineer - GaN HEMT for RF & Power - Skills Required - HEMT, Device & Process Development, Process Integration, GaN or GaAS or Si, RF/Power
We're a novel semiconductor company that's made a name for ourselves by designing and developing solutions for our clients. We are expanding our team and seeking an experienced Device/Process Integration Engineer familiar with GaN HEMT processes!
If you have semiconductor manufacturing process knowledge and layout skills, please APPLY NOW!
What You Will Be Doing
Device & Process development for GaN HEMT
Process characterization, qualification and yield enhancement
R&D projects to support fabrication
What You Need for this Position
A Ph.D. or Master's in a relevant field PLUS
Experience with HEMT (High Electron Mobility Transistor) for GaN or GaAs
Experience with RF & Power semiconductors
So, if you are a Device or Process Integration Engineer, APPLY NOW!
Applicants must be authorized to work in the U.S.
CyberCoders, Inc is proud to be an Equal Opportunity Employer
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, national origin, disability, protected veteran status, or any other characteristic protected by law.
Your Right to Work – In compliance with federal law, all persons hired will be required to verify identity and eligibility to work in the United States and to complete the required employment eligibility verification document form upon hire.
Device Engineer - GaN HEMT for RF & Power CA-Los Angeles IE1-1440357